GE Global Research Develops ''Ideal'' Carbon Nanotube Diode

GE Global Research, the centralized research organization of General Electric (NYSE: GE), announced the development of a carbon nanotube diode that operates at the “theoretical limit,” or best possible performance. This is a significant improvement upon the original nanotube diode device that GE developed and announced last year. This latest breakthrough will enable even smaller and faster electronic devices with increased functionality. In the course of its research, the GE team led by Dr. Ji Ung Lee made a related discovery when it observed a photovoltaic effect in the nanotube diode device. GE says this development could lead to new approaches and breakthroughs in photovoltaic research. GE reported its discovery in the cover story of the August 15, 2005 edition of Applied Physics Letters. “GE’s success in developing the ‘perfect’ carbon nanotube device has not only ushered in a new era in electronics, it has potentially opened new doors in solar energy research,” said Margaret Blohm, GE’s advanced technology leader for nanotechnology. “The discovery of a photovoltaic effect in our nanotube device could lead to exciting breakthroughs in solar cells that make them more efficient and a more viable alternative in the mainstream energy market. Diodes are fundamental semiconductor devices […]

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